LaNbON2

semiconductor

· LaNbON2

LaNbON2 is an oxynitride semiconductor compound combining lanthanum, niobium, oxygen, and nitrogen in a perovskite-related structure. This material is primarily of research interest for photocatalytic and optoelectronic applications, where its nitrogen-doping of traditional oxide ceramics enables wider bandgap tunability and improved visible-light absorption compared to conventional oxide semiconductors. Engineers consider oxynitrides like LaNbON2 when designing photocatalysts for water splitting, air purification, or environmental remediation systems where standard oxides are insufficiently responsive to the visible spectrum.

photocatalytic water splittingenvironmental remediationvisible-light photocatalysissemiconductor optoelectronicsresearch-phase materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions
Band Gap(Eg)2 entries	1.700	eV	—
↳	1.500	eV	—
Magnetic Moment(μB)	0.0000111	μB	—

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.1000	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

LaNbON2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control