LaGdO3

semiconductor

· LaGdO3

LaGdO3 is a rare-earth oxide ceramic compound composed of lanthanum, gadolinium, and oxygen, belonging to the family of lanthanide perovskites and mixed rare-earth oxides. This material is primarily investigated in research contexts for high-temperature applications and as a potential substrate or buffer layer in thin-film electronics, particularly for superconducting and ferroelectric devices. Its notable advantages include high melting point, chemical stability, and lattice compatibility with functional oxide thin films, making it an alternative to conventional substrates like yttria-stabilized zirconia (YSZ) or LaAlO3 where thermal expansion matching or specific dielectric properties are critical.

thin-film substrateshigh-temperature ceramicssuperconductor applicationsoxide electronics researchthermal barrier materialssolid-state device interfaces

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.561	eV	—
Magnetic Moment(μB)	0.000	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-3.149	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

LaGdO3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control