LaGaSb₂ is a ternary semiconductor ceramic compound combining lanthanum, gallium, and antimony elements, belonging to the family of rare-earth-based III-V semiconductors. This material is primarily of research and development interest for optoelectronic and photonic applications where bandgap engineering and high carrier mobility are required. Its rare-earth doping and mixed-valence structure make it potentially valuable for infrared detection, photovoltaic devices, and high-frequency electronic components where conventional binary semiconductors (GaAs, GaSb) reach performance limitations.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.649 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.7571 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data