LaGaOFN

semiconductor

· LaGaOFN

LaGaOFN is an experimental oxynitride semiconductor compound containing lanthanum, gallium, oxygen, and nitrogen. This material belongs to the family of wide-bandgap semiconductors and oxynitride perovskites, which are actively researched for next-generation optoelectronic and photocatalytic applications. LaGaOFN is notable in materials research because nitrogen incorporation into oxide lattices can engineer the bandgap and electronic properties compared to traditional oxides, making it potentially valuable for visible-light photocatalysis, UV-absorbing layers, and high-temperature electronic devices, though it remains largely in the research phase with limited commercial deployment.

photocatalytic materials researchwide-bandgap semiconductorsoptoelectronic devicesvisible-light photocatalysishigh-temperature electronicsexperimental functional ceramics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.400	eV	—
Magnetic Moment(μB)	8.175e-16	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.5000	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

LaGaOFN

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control