LaGaO3
semiconductorLaGaO₃ is a perovskite-structured ceramic compound composed of lanthanum, gallium, and oxygen, functioning as a wide-bandgap semiconductor. It is primarily investigated as a substrate material and epitaxial platform for advanced electronic and optoelectronic devices, particularly in gallium nitride (GaN) and related wide-bandgap semiconductor growth, where its lattice parameters and thermal properties offer advantages over conventional substrates like sapphire. The material is still largely in research and development phases, with potential applications emerging in high-power RF devices, UV optoelectronics, and next-generation power electronics where thermal management and lattice matching are critical performance drivers.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 190.8 | GPa | — | ||
Poisson's Ratio(ν) | 0.2600 | - | — | ||
Shear Modulus(G) | 108.7 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 7.044 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)4 entries | 4.400 | eV | — | ||
| ↳ | 3.829 | eV | — | ||
| ↳ | 5.500 | eV | — | ||
| ↳ | 3.461 | eV | — | ||
Magnetic Moment(μB)3 entries | 0.000 | μB | — | ||
| ↳ | -0.00000106 | μB | — | ||
| ↳ | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -144.5 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf)3 entries | -2.935 | eV/atom | — | ||
| ↳ | -0.04000 | eV/atom | — | ||
| ↳ | -2.939 | eV/atom | — |