LaGaN3 — Properties & Data | MatWorld

LaGaN3

ceramic

· LaGaN3

LaGaN3 is a rare-earth gallium nitride ceramic compound combining lanthanum, gallium, and nitrogen. This material is primarily investigated in research contexts for wide-bandgap semiconductor and optoelectronic applications, where the rare-earth doping may offer enhanced luminescence, thermal stability, or electronic properties compared to undoped GaN systems.

wide-bandgap semiconductorsoptoelectronic deviceshigh-temperature electronicsUV/blue light emittersthermal management substratesresearch and development

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Filter by

Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	2.284	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.9200	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

LaGaN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental