La5In3S9O3

semiconductor

· La5In3S9O3

La5In3S9O3 is a rare-earth indium sulfide oxide compound that belongs to the family of mixed-anion semiconductors combining lanthanum, indium, sulfur, and oxygen elements. This material is primarily of research and developmental interest rather than established industrial production, being studied for its potential as a wide-bandgap semiconductor in optoelectronic and photocatalytic applications. The incorporation of rare-earth lanthanum with indium sulfide chemistry positions it as a candidate for next-generation photonic devices and environmental remediation systems where conventional semiconductors face performance limitations.

experimental semiconductorsphotocatalytic applicationsoptoelectronic devicesrare-earth compound researchvisible-light photocatalysisthin-film semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.600	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

La5In3S9O3

Electrical Properties

Regulatory Screening

Environmental

Export Control