La₃Si₁Sb₀.₃₃Se₇ is a mixed-anion semiconductor compound combining rare-earth lanthanum with group 14–16 elements (silicon, antimony, and selenium), belonging to the family of layered chalcogenide semiconductors. This is an experimental research material under investigation for thermoelectric and optoelectronic applications, where the combination of mixed-valence chemistry and layered structure offers potential for tuning bandgap, carrier mobility, and thermal transport properties relative to simpler binary or ternary semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.750 | eV | — |