La3Si1Sb0.33S7

semiconductor

· La3Si1Sb0.33S7

La3Si1Sb0.33S7 is a mixed-anion semiconductor compound combining rare-earth (lanthanum), metalloid (silicon, antimony), and chalcogen (sulfur) elements in a complex crystal structure. This is a research-phase material studied for solid-state ionics and photovoltaic applications, where the mixed-anion framework and rare-earth doping offer potential for tuning electronic and ionic transport properties beyond conventional binary semiconductors.

solid-state electrolytes (experimental)photovoltaic researchrare-earth semiconductorsion-conducting ceramicsnext-generation battery materialsadvanced optoelectronics research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.920	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

La3Si1Sb0.33S7

Electrical Properties

Regulatory Screening

Environmental

Export Control