La3In1Ge0.5S7

semiconductor

· La3In1Ge0.5S7

La₃In₁Ge₀.₅S₇ is an experimental mixed-metal sulfide semiconductor compound combining lanthanum, indium, and germanium in a layered chalcogenide structure. This material family is primarily investigated in research contexts for solid-state ionics and photonic applications, where the combination of rare-earth and post-transition metals in a sulfide lattice offers potential for superior ionic conductivity or tunable optical response compared to binary sulfides or conventional solid electrolytes.

solid-state battery electrolytesphotonic crystalschalcogenide researchionic conductorsoptoelectronic devices (research phase)thiophosphate analogs

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.610	eV	—

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Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

La3In1Ge0.5S7

Electrical Properties

Regulatory Screening

Environmental

Export Control