La3In1Ge0.5S7
semiconductor· La3In1Ge0.5S7
La₃In₁Ge₀.₅S₇ is an experimental mixed-metal sulfide semiconductor compound combining lanthanum, indium, and germanium in a layered chalcogenide structure. This material family is primarily investigated in research contexts for solid-state ionics and photonic applications, where the combination of rare-earth and post-transition metals in a sulfide lattice offers potential for superior ionic conductivity or tunable optical response compared to binary sulfides or conventional solid electrolytes.
solid-state battery electrolytesphotonic crystalschalcogenide researchionic conductorsoptoelectronic devices (research phase)thiophosphate analogs
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
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