La2Ga0.33Sb1S5

semiconductor

· La2Ga0.33Sb1S5

La2Ga0.33Sb1S5 is a mixed-anion semiconductor compound combining rare-earth lanthanum with gallium, antimony, and sulfur—a composition designed to engineer specific electronic and optical properties through controlled aliovalent doping and crystal structure. This material belongs to the family of chalcogenide semiconductors and represents research-level work aimed at tuning bandgap, carrier mobility, and light-absorption characteristics for photovoltaic or optoelectronic applications. Such rare-earth-doped sulfide compounds are explored as alternatives to conventional semiconductors where narrow bandgaps, photoconductivity, or IR sensitivity are required, though this specific composition remains largely in development rather than high-volume industrial use.

photovoltaic/solar cells (research)IR detectors and sensorsoptoelectronic devicesphotocatalysis (experimental)semiconductor research materialsnarrow-bandgap semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.760	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

La2Ga0.33Sb1S5

Electrical Properties

Regulatory Screening

Environmental

Export Control