La2.1Bi5.9Pb2S14

semiconductor

· La2.1Bi5.9Pb2S14

La2.1Bi5.9Pb2S14 is a mixed-metal sulfide semiconductor compound combining lanthanum, bismuth, and lead in a layered chalcogenide structure. This is a research-phase material studied for thermoelectric and optoelectronic applications, particularly in the broader family of complex sulfide semiconductors that offer tunable band gaps and potential for efficient heat-to-electricity conversion or photonic device integration.

thermoelectric devicessolid-state energy conversionresearch optoelectronicslow-dimensional semiconductorsexploratory materials sciencenext-generation photovoltaics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.000	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

La2.1Bi5.9Pb2S14

Electrical Properties

Regulatory Screening

Environmental

Export Control