La1 N1

semiconductor
· La1 N1

Lanthanum nitride (LaN) is a ceramic compound semiconductor belonging to the rare-earth nitride family, characterized by a rock-salt crystal structure and metallic-like electrical properties. This material is primarily of research and development interest for advanced electronic and photonic applications, including potential use in high-temperature devices, solar cells, and optoelectronic components where its wide bandgap and thermal stability offer advantages over conventional semiconductors. LaN and related rare-earth nitrides remain largely in the experimental phase, with ongoing investigation into their viability as alternatives to traditional wide-bandgap semiconductors in extreme-environment and next-generation device architectures.

Wide-bandgap semiconductorsHigh-temperature electronicsPhotonic/optoelectronic devicesResearch materialThermal barrier coatingsAdvanced device architectures

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Bulk Modulus(K)
130.0
GPa—
Shear Modulus(G)
34.18
GPa—
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Band Gap(Eg)
0.06080
eV—
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Formation Energy(ΔHf)
-0.9560
eV/atom—
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.