La1 Ag1 O2

semiconductor

· La1 Ag1 O2

La₁Ag₁O₂ is a mixed-metal oxide semiconductor combining lanthanum and silver in a layered or perovskite-related crystal structure. This is a research-phase compound rather than a commercial material, belonging to the family of complex metal oxides that show promise for electrochemical and photochemical applications due to the combined properties of rare-earth and noble-metal components.

photocatalytic materials (research)electrochemical sensorsoxygen reduction catalystssolid-state energy storagethin-film electronics (experimental)advanced oxidation processes

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.066	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.381	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

La1 Ag1 O2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control