La1.86Tb1.14Ga1.67S7

semiconductor

· La1.86Tb1.14Ga1.67S7

La1.86Tb1.14Ga1.67S7 is a rare-earth sulfide semiconductor compound combining lanthanum, terbium, and gallium in a thiogallate structure. This is a research-phase material primarily investigated for photonic and optoelectronic applications where rare-earth luminescence and wide bandgap semiconducting behavior are advantageous; it represents an emerging class of materials that may offer alternatives to conventional wide-bandgap semiconductors in specialized applications requiring rare-earth doping or luminescent functionality.

rare-earth photonics (research)wide-bandgap semiconductorsluminescent materialsoptical coatings (development)high-temperature electronics (exploratory)scintillator technology (potential)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.670	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

La1.86Tb1.14Ga1.67S7

Electrical Properties

Regulatory Screening

Environmental

Export Control