La(InS2)3 is a ternary semiconductor compound combining lanthanum with indium sulfide, belonging to the family of rare-earth metal chalcogenides. This material is primarily investigated in research settings for optoelectronic and photonic applications, where its layered sulfide structure and rare-earth dopant effects may enable tunable bandgap properties and potential nonlinear optical behavior.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.030 | eV | — |