KWO2N is a tungsten oxide-based semiconductor compound, likely a mixed-valence or doped tungsten oxide phase developed for electronic or photocatalytic applications. This material belongs to the broader family of transition metal oxides that are actively researched for their tunable electrical and optical properties. The specific composition suggests potential use in energy conversion, environmental remediation, or advanced electronic devices where tungsten oxide's semiconductor characteristics provide advantages over conventional materials.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.6000 | eV | — | ||
Magnetic Moment(μB) | 0.000962 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.1000 | eV/atom | — |