KGaN3 — Properties & Data | MatWorld

KGaN3

ceramic

· KGaN3

KGaN3 is a potassium gallium nitride ceramic compound belonging to the wide-bandgap semiconductor family. This material is primarily of research and development interest rather than established commercial use, with potential applications in high-temperature electronics, optoelectronics, and power devices where gallium nitride-based systems offer superior performance compared to traditional silicon. The potassium-doped variant is being explored for enhanced electrical properties and thermal stability in next-generation semiconductor and photonic device architectures.

wide-bandgap semiconductorshigh-temperature electronicspower conversion devicesoptoelectronic componentsresearch and development materialsadvanced ceramics

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	5.000	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	2.200	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

KGaN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental