K8 As8

semiconductor

· K8 As8

K8As8 is a III-V compound semiconductor composed of potassium and arsenic, representing an experimental material within the alkali-arsenic semiconductor family. While not commercially established, this compound is of research interest for potential optoelectronic and photonic applications, where III-V semiconductors are valued for direct bandgap properties and tunable electronic characteristics. The material would be investigated primarily in laboratory settings for fundamental studies of novel semiconductor systems, though practical device applications remain in early developmental stages.

experimental semiconductor researchoptoelectronic device prototypingphotonic material studiesband structure engineeringlaboratory characterizationquantum material exploration

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	19.31	GPa	—
Shear Modulus(G)	9.267	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.7616	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.5330	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

K8 As8

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control