K4 Mn4 O6
semiconductorK₄Mn₄O₆ is a mixed-valence manganese oxide semiconductor with potassium, belonging to the family of layered oxide compounds that exhibit interesting electrochemical and electronic properties. This material is primarily of research interest for energy storage applications, particularly in battery and supercapacitor technologies, where manganese oxides are valued for their low cost, earth abundance, and variable oxidation states that enable reversible charge transfer. The potassium-doped composition may offer improved ionic conductivity and structural stability compared to undoped manganese oxides, making it a candidate material for next-generation electrode development, though industrial adoption remains limited and further characterization is typically required for specific engineering applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |