K4 Mn4 O6

semiconductor

· K4 Mn4 O6

K₄Mn₄O₆ is a mixed-valence manganese oxide semiconductor with potassium, belonging to the family of layered oxide compounds that exhibit interesting electrochemical and electronic properties. This material is primarily of research interest for energy storage applications, particularly in battery and supercapacitor technologies, where manganese oxides are valued for their low cost, earth abundance, and variable oxidation states that enable reversible charge transfer. The potassium-doped composition may offer improved ionic conductivity and structural stability compared to undoped manganese oxides, making it a candidate material for next-generation electrode development, though industrial adoption remains limited and further characterization is typically required for specific engineering applications.

battery electrode materialssupercapacitor developmentenergy storage researchelectrochemical catalysistransition metal oxide semiconductorsionic conductor research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	52.99	GPa	—
Shear Modulus(G)	16.61	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00280	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.437	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

K4 Mn4 O6

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control