K₄Ge₂As₄ is a quaternary semiconductor compound combining potassium, germanium, and arsenic in a stoichiometric ratio, belonging to the family of alkali-metal group-IV/V semiconductors. This is a research-phase material rather than a production commodity, studied primarily for its potential in optoelectronic and thermoelectric applications where its bandgap and carrier transport properties may offer advantages in infrared detection or energy conversion. The material's narrow composition window and complex crystal chemistry make it relevant primarily to experimental photonics and solid-state physics research rather than established industrial manufacturing.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.8228 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4480 | eV/atom | — |