K4 C4 O8

semiconductor

· K4 C4 O8

K₄C₄O₈ is an experimental potassium-based oxide-carbide semiconductor compound currently investigated primarily in research settings rather than established in mainstream industrial production. While the material family suggests potential for wide-bandgap semiconductor applications, this specific composition remains largely confined to materials science and solid-state chemistry research, where it is studied for its electronic and structural properties relative to other metal oxide and carbide semiconductors.

research semiconductorswide-bandgap material studiessolid-state electronicsoxide-carbide compoundsmaterials characterization

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	39.81	GPa	—
Shear Modulus(G)	17.99	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.725	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.677	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

K4 C4 O8

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control