K3 Tm1 is a semiconductor material containing thulium (Tm) as a key dopant or alloying element, likely part of a rare-earth-doped ceramic or crystal host system. This composition suggests a research or specialized material designed for optoelectronic or photonic applications where rare-earth ions provide specific optical or electronic functionality. K3 Tm1 is primarily of interest in advanced photonics, laser systems, and possibly solid-state lighting research, where thulium doping is leveraged for infrared emission or frequency conversion; it represents a niche material choice rather than a commodity semiconductor.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01110 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.5440 | eV/atom | — |