K3 In1 is a semiconductor compound belonging to the indium-based material family, likely an intermetallic or ternary phase with potassium. This appears to be a research or specialized compound rather than a widely commercialized material. The material is notable within semiconductor physics and materials science research for its potential electronic and structural properties, though industrial adoption remains limited compared to conventional semiconductors like silicon or gallium arsenide.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 7.667 | GPa | — | ||
Shear Modulus(G) | 3.380 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00755 range 0.00350–0.01160median of 2 measurements | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.01550 range -0.02100–-0.01000median of 2 measurements | eV/atom | — |