K2GaAgI6 is an intermetallic compound belonging to the halide family, composed of potassium, gallium, silver, and iodine. This is an experimental/research material rather than an established engineering alloy; compounds in this family are investigated for semiconductor, photonic, and ionic conductivity applications where the combination of metallic and halide components offers potential for solid-state electronic devices. The material's notable characteristic is its mixed-metal halide structure, which may enable properties relevant to next-generation energy storage or optoelectronic systems, though industrial adoption remains limited and primarily confined to academic research.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.375 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.09350 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.7697 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data