K2Ti2P2Se10 is a layered chalcogenide semiconductor compound combining potassium, titanium, phosphorus, and selenium elements. This is a research-phase material being investigated for its potential in optoelectronic and thermoelectric applications, where layered chalcogenides offer tunable electronic properties and anisotropic transport characteristics. Interest in this material family stems from their structural flexibility and potential for band-gap engineering in next-generation energy conversion and light-emission devices, though practical manufacturing and device integration remain under development.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.8162 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7740 | eV/atom | — |