K2Ge2Pb2O7 is an experimental pyrochlore-family oxide semiconductor composed of potassium, germanium, lead, and oxygen. This material is primarily of research interest for investigating novel semiconducting and photonic properties in mixed-metal oxide systems, rather than an established industrial material. The compound belongs to a family of layered oxides under investigation for potential applications in optoelectronics, solid-state chemistry, and materials exploration where unconventional band structures or ion-conducting pathways may offer advantages over conventional semiconductors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 45.31 | GPa | — | ||
Shear Modulus(G) | 23.09 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.242 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.730 | eV/atom | — |