K2Ga2As4O14 is a mixed-metal oxide semiconductor compound containing potassium, gallium, and arsenic, belonging to the family of complex ternary/quaternary oxides with potential photonic and electronic applications. This is a research-phase material studied primarily in academic and specialized photonics contexts for its optical and semiconducting properties, rather than a conventional industrial commodity. Engineers considering this material should recognize it as an exploratory compound for advanced optoelectronic or nonlinear optical applications where conventional semiconductors are insufficient, though production scalability and reliability data remain limited compared to established alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.919 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.585 | eV/atom | — |