K₂Bi₂P₄S₁₂ is a mixed-metal thiophosphate semiconductor compound combining potassium, bismuth, phosphorus, and sulfur in a layered crystal structure. This is a research-phase material studied for its potential in photovoltaic and optoelectronic applications, where the sulfur-rich framework and bismuth-containing chemistry offer tunable bandgap properties and possible advantages in visible-light absorption compared to conventional semiconductors. Interest in this material family stems from the search for lead-free, earth-abundant alternatives to chalcogenide semiconductors in solid-state devices and thin-film solar technologies.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 24.09 | GPa | — | ||
Shear Modulus(G) | 12.87 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.172 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5860 | eV/atom | — |