K2Ba8Sb6O2 is an inorganic oxide semiconductor compound containing potassium, barium, and antimony—a mixed-metal oxide system under investigation primarily in materials research rather than established industrial production. This material belongs to the family of complex oxide semiconductors being explored for potential applications in optoelectronics and solid-state devices, where its layered structure and mixed-valence composition offer tunable electronic properties. As a research-stage compound, it represents the broader effort to engineer new semiconductors with potentially lower toxicity or improved stability compared to conventional alternatives like cadmium telluride or lead halide systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 28.54 | GPa | — | ||
Shear Modulus(G) | 18.45 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.070 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.438 | eV/atom | — |