K12 As4 S12

semiconductor

· K12 As4 S12

K12As4S12 is an experimental III-V-VI compound semiconductor combining arsenic and sulfur elements in a layered crystal structure, belonging to the broader family of chalcogenide semiconductors under active research. This material is primarily of academic and exploratory interest for optoelectronic and photovoltaic applications, where its unique bandgap and optical properties could enable next-generation light-emitting devices, photodetectors, or thin-film solar cells. The inclusion of both group-V (arsenic) and group-VI (sulfur) elements suggests potential for tunable electronic properties not readily available in binary semiconductors, though industrial deployment remains limited pending further development and characterization.

experimental optoelectronicsthin-film photovoltaicsphotodetector researchvisible-light emittersmaterials researchcompound semiconductor development

Compliance & Regulations

?ITAR?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	19.37	GPa	—
Shear Modulus(G)	10.18	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.572	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.084	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

Quality & Standards

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

K12 As4 S12

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control

Quality & Standards