K1As4I1O6 is an experimental semiconductor compound belonging to the mixed-halide perovskite or complex oxide family, combining potassium, arsenic, iodine, and oxygen in a defined stoichiometric ratio. This material is primarily of research interest for photovoltaic, optoelectronic, and solid-state device applications, where its semiconducting properties and crystalline structure are being evaluated as alternatives to more conventional materials like silicon or traditional perovskites. The compound's notable characteristic is its potential for tunable electronic properties through compositional engineering, though it remains largely in the investigational phase without widespread commercial deployment.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 51.42 | GPa | — | ||
Shear Modulus(G) | 26.93 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.547 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.358 | eV/atom | — |