K0.8Hg1.2Sn2S8

semiconductor

· K0.8Hg1.2Sn2S8

K₀.₈Hg₁.₂Sn₂S₈ is a quaternary chalcogenide semiconductor compound combining potassium, mercury, tin, and sulfur in a mixed-valence structure. This is a research-phase material rather than an established commercial product; it belongs to the family of complex sulfide semiconductors that are investigated for photovoltaic, optoelectronic, and thermoelectric applications where bandgap engineering and carrier mobility are critical. The mixed-metal composition and sulfide chemistry offer potential advantages in tuning electronic properties and cost reduction compared to single-metal or binary semiconductors, though industrial adoption remains limited pending demonstration of scalable synthesis and device-level performance.

photovoltaic absorbersoptoelectronic devicesthermoelectric materialsbandgap engineering researchthin-film semiconductorsmaterials informatics screening

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.780	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

K0.8Hg1.2Sn2S8

Electrical Properties

Regulatory Screening

Environmental

Export Control