IrTlO3 is an experimental mixed-metal oxide semiconductor containing iridium and thallium. This compound belongs to the family of ternary oxides under investigation for advanced electronic and photonic applications, though it remains largely in the research phase without widespread commercial deployment. The material is of interest to researchers exploring novel semiconducting oxides with potential for high-performance electronic devices, photocatalysis, or specialized optical applications where the combination of these metals might offer advantages over conventional oxide semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.5440 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Magnetic Moment(μB)2 entries | 0.4000 | μB | — | ||
| ↳ | 1.895 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | -0.7310 | eV/atom | — | ||
| ↳ | 1.840 | eV/atom | — |