Ir4 N8
semiconductorIr4N8 is an experimental nitride semiconductor compound in the iridium-nitrogen material system, representing research-phase development rather than a commercially established material. This compound belongs to the family of refractory nitride semiconductors, which are investigated for their potential in high-temperature electronics, wide-bandgap device applications, and extreme-environment sensing where conventional semiconductors fail. The iridium nitride family remains largely in academic exploration due to synthesis and processing challenges, but shows promise for specialized applications requiring thermal stability, chemical inertness, and wide-bandgap semiconducting behavior in demanding industrial environments.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |