Ir2 I6
semiconductorIr₂I₆ is an iridium iodide compound belonging to the halide semiconductor family, combining the high-density transition metal iridium with iodine to form a crystalline material with semiconducting properties. This compound is primarily of research and developmental interest rather than established industrial production, with potential applications in optoelectronics and solid-state physics where the unique electronic structure of iridium halides offers advantages for photonic or quantum device research. The material is notable within the halide perovskite and post-perovskite research space for its high atomic mass constituents, which can influence bandgap tuning and carrier dynamics compared to lighter halide alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 25.08 | GPa | — | ||
Shear Modulus(G) | 13.87 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.179 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.1350 | eV/atom | — |