InZnON2 is an experimental ceramic compound combining indium, zinc, oxygen, and nitrogen—a member of the oxynitride ceramic family being developed for advanced semiconductor and optoelectronic applications. This material is primarily of research interest rather than established industrial use, with potential applications in wide-bandgap electronics, transparent conductive coatings, and high-temperature structural ceramics where the mixed anion system (oxygen + nitrogen) offers tailored electronic and thermal properties distinct from conventional oxides or nitrides alone.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | -1.149 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.820 | eV/atom | — |