InZnO₂F is an experimental ceramic compound combining indium, zinc, oxygen, and fluorine elements, belonging to the family of mixed-metal oxide fluorides. This material is primarily of research interest for transparent conductive oxide (TCO) applications and advanced optoelectronic devices, where the fluorine doping modifies electronic properties and band structure compared to conventional indium tin oxide (ITO) or zinc oxide alternatives. Its potential lies in next-generation display technologies, photovoltaic devices, and transparent electronics where improved conductivity, optical transmission, or cost reduction over established TCOs is sought.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | -9.782e-11 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.6800 | eV/atom | — |