InTlO2N

ceramic
· InTlO2N

InTlO2N is an experimental oxynitride ceramic compound containing indium, thallium, and nitrogen, belonging to the family of complex metal oxynitrides under active research for advanced functional applications. This material is primarily investigated in laboratory and development settings for optoelectronic, photocatalytic, or wide-bandgap semiconductor applications where the combination of metal cations and nitrogen incorporation offers tunable electronic properties. Its selection would appeal to materials researchers or engineers working on next-generation energy conversion, photocatalysis, or semiconductor devices where unconventional ternary/quaternary compositions can provide performance advantages unavailable in conventional binary or ternary oxides.

Photocatalytic materials (research)Wide-bandgap semiconductorsOptoelectronic devices (experimental)Energy conversion materialsFunctional ceramic coatingsAdvanced materials research

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
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eV——
Magnetic Moment(μB)
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μB——
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Formation Energy(ΔHf)
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eV/atom——
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.