InTiO2F is a composite or doped titanium dioxide semiconductor material incorporating indium and fluorine elements, developed primarily for photocatalytic and optoelectronic applications. This is a research-phase material rather than a commercial commodity; it belongs to the family of modified TiO2 semiconductors engineered to improve visible-light activity and charge carrier dynamics compared to pure anatase or rutile TiO2. The material shows promise in environmental remediation and energy conversion where enhanced light absorption and reduced electron-hole recombination are critical.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.7000 | eV | — | ||
Magnetic Moment(μB) | -2.347e-15 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.2200 | eV/atom | — |