InTaO2N is an experimental mixed-metal oxynitride ceramic composed of indium, tantalum, oxygen, and nitrogen. This material belongs to the family of advanced functional ceramics designed to exhibit novel electronic, optical, or photocatalytic properties by combining the properties of oxide and nitride phases. Research into InTaO2N and similar oxynitrides focuses on photocatalytic water splitting, visible-light absorption, and wide-bandgap semiconductor applications where the nitrogen incorporation modifies electronic structure compared to conventional oxides, making it of interest in renewable energy and environmental remediation contexts.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | -0.00273 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.2600 | eV/atom | — |