InSnS is an indium tin sulfide ceramic compound belonging to the family of ternary chalcogenides, which are of significant interest in semiconductor and photovoltaic research. While primarily in the research and development phase rather than established industrial production, materials in this class are being investigated for thin-film photovoltaic devices, optoelectronic applications, and potentially as window layers in solar cells due to their tunable bandgap and optical properties. InSnS and related ternary sulfides represent alternatives to more common binary semiconductors, offering potential advantages in cost, earth-abundance, and device performance when integrated into emerging photovoltaic architectures.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 34.54 | GPa | — | ||
Poisson's Ratio(ν) | 0.4500 | - | — | ||
Shear Modulus(G) | 13.87 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.524 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.4750 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.08562 | eV/atom | — |