InSnON2 is an oxynitride ceramic compound combining indium, tin, oxygen, and nitrogen elements, representing an emerging material in the oxide-nitride family with potential for advanced electronic and photonic applications. This composition sits at the intersection of transparent conducting oxides and nitride semiconductors, making it of interest for research into next-generation optoelectronic devices, though industrial-scale applications remain largely in development. The material's potential stems from the possibility of combining desirable properties from both oxide (transparency, conductivity) and nitride (thermal stability, bandgap tuning) families.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | -0.5914 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.360 | eV/atom | — |