InSnO2N

ceramic

· InSnO2N

InSnO₂N is an experimental oxynitride ceramic compound combining indium, tin, oxygen, and nitrogen phases, representing an emerging class of materials designed to bridge properties of traditional oxides and nitrides. This material is primarily of research interest for optoelectronic and semiconductor applications, where the nitrogen incorporation into the indium-tin oxide (ITO) matrix offers potential for enhanced electrical conductivity, modified band gap, or improved thermal stability compared to conventional ITO. The oxynitride composition is notable for potential use in transparent conductive coatings and next-generation thin-film devices where standard ITO shows limitations.

transparent conductive coatingsthin-film semiconductorsoptoelectronic researchdisplay and photovoltaic applicationshigh-temperature electronics

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	-0.00466	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.6600	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InSnO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental