InSn2As2Se

semiconductor

· InSn2As2Se

InSn₂As₂Se is a quaternary semiconductor compound composed of indium, tin, arsenic, and selenium elements, belonging to the family of III-V and IV-VI hybrid semiconductors. This material is primarily of research and exploratory interest rather than established industrial production, with potential applications in infrared optics, photovoltaic devices, and specialized electronic components where its narrow bandgap and thermal properties may offer advantages over more conventional III-V semiconductors. Engineers would consider this compound for niche applications requiring tunable optoelectronic properties or enhanced infrared response, though availability and processing maturity remain limited compared to established alternatives like GaAs or InSb.

infrared detectorsnarrow-bandgap semiconductorsphotovoltaic researchoptoelectronic devicesthermal imagingexperimental/research applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.2000	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InSn2As2Se

Electrical Properties

Regulatory Screening

Environmental

Export Control