InSiTe3 is a ternary ceramic compound combining indium, silicon, and tellurium elements, representing a layered or mixed-valence ceramic material system. While not yet established as a commercial engineering material, this composition belongs to the family of semiconductor ceramics and layered compounds that are of active research interest for applications requiring combined mechanical rigidity and electronic or thermal functionality. Engineers would consider InSiTe3 for projects exploring advanced ceramic materials that integrate structural performance with semiconductor behavior, or where weak interlayer bonding (as suggested by exfoliation behavior) could enable novel processing routes or functional properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 28.66 | GPa | — | ||
Exfoliation Energy(Eexf) | 91.49 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.2700 | - | — | ||
Shear Modulus(G) | 16.09 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.466 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.000 | eV | — | ||
| ↳ | 0.3800 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 19.83 | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.1940 | eV/atom | — |