InSbN3

ceramic

· InSbN3

InSbN3 is an experimental nitride ceramic compound combining indium, antimony, and nitrogen, belonging to the family of III-V nitride semiconductors and advanced ceramics. This material remains primarily in research and development, with potential applications in high-temperature semiconducting devices, wide-bandgap electronics, and specialized optoelectronic components where conventional nitrides like GaN or InN may have limitations. Its relevance to practicing engineers is currently limited to research institutions and advanced materials development teams exploring next-generation semiconductor and thermal management solutions.

wide-bandgap semiconductors (research)high-temperature electronicsoptoelectronic devices (experimental)advanced materials developmentthermal management systems (potential)

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.9066	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.540	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InSbN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental