InSbAu is a ternary intermetallic compound combining indium, antimony, and gold, belonging to the family of III-V semiconductor alloys with metallic gold addition. This material is primarily of research and developmental interest for advanced optoelectronic and thermoelectric applications where the combination of semiconducting properties from the InSb base and enhanced electrical/thermal characteristics from gold doping offers potential advantages over binary alternatives. Its use remains largely experimental, with investigation focused on infrared detectors, high-frequency electronics, and specialized thermal management systems where the modified electronic structure can improve performance.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 59.69 | GPa | — | ||
Shear Modulus(G) | -4.310 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 9.210 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.05169 | eV/atom | — |