InSb0.7As0.3

semiconductor

· InSb0.7As0.3

InSb₀.₇As₀.₃ is a ternary III-V semiconductor alloy combining indium antimonide and indium arsenide in a 70:30 composition ratio. This material is engineered for infrared and optoelectronic applications where bandgap tuning between InSb and InAs enables detection and emission in the mid-to-long wavelength infrared spectrum. The composition is notable for balancing the narrow bandgap of InSb (favorable for thermal infrared detection) with the lattice properties and processing characteristics of InAs, making it relevant for researchers and manufacturers targeting wavelength-specific infrared sensors, thermal imaging systems, and quantum well structures where lattice matching and bandgap engineering are critical.

infrared detectorsthermal imaging sensorsquantum well structuresoptoelectronic devicesbandgap engineeringmid-wave infrared applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.1600	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InSb0.7As0.3

Electrical Properties

Regulatory Screening

Environmental

Export Control