InSb0.5As0.5

semiconductor

· InSb0.5As0.5

InSb₀.₅As₀.₅ is a III-V semiconductor alloy combining indium antimonide and indium arsenide in equal proportions, belonging to the narrow-bandgap semiconductor family. This lattice-matched or near-lattice-matched compound is primarily of research and development interest for infrared (IR) detection and high-speed optoelectronic devices, where its intermediate bandgap and carrier mobility characteristics offer a tunable alternative to binary InSb or InAs. The material is notable for potential integration in thermophotovoltaic systems, mid-infrared sensors, and heterojunction structures where composition engineering enables bandgap tailoring without introducing lattice strain.

infrared detectorsthermophotovoltaic deviceshigh-speed photodiodesepitaxial heterojunctionsquantum well structuresmid-infrared optoelectronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.1000	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InSb0.5As0.5

Electrical Properties

Regulatory Screening

Environmental

Export Control